NSB13211DW6T1G
onsemi
onsemi
TRANS NPN/PNP PREBIAS 0.23W SC88
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Maximize circuit reliability with onsemi's NSB13211DW6T1G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in NSB13211DW6T1G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms, 10kOhms
- Resistor - Emitter Base (R2): 4.7kOhms, 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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