IPA030N10NF2SXKSA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO220-3
$5.47
Available to order
Reference Price (USD)
1+
$5.47000
500+
$5.4153
1000+
$5.3606
1500+
$5.3059
2000+
$5.2512
2500+
$5.1965
Exquisite packaging
Discount
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Discover high-performance IPA030N10NF2SXKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPA030N10NF2SXKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 169µA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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