IPA180N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 28A TO220-FP
$0.69
Available to order
Reference Price (USD)
500+
$1.00292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPA180N10N3GXKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPA180N10N3GXKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
GeneSiC Semiconductor
G3R450MT17J
Infineon Technologies
BSZ16DN25NS3GATMA1
Infineon Technologies
IPP110N20NAAKSA1
Rohm Semiconductor
QS5U21TR
Vishay Siliconix
SIDR680DP-T1-GE3
Vishay Siliconix
IRFI720GPBF
Texas Instruments
CSD19531Q5A
Infineon Technologies
IRFP7530PBF
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL3400A-F2-0000HF
Fairchild Semiconductor