IPA60R385CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 9A TO220-FP
$3.21
Available to order
Reference Price (USD)
1+
$2.70000
10+
$2.44100
100+
$1.96140
500+
$1.52556
1,000+
$1.26404
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPA60R385CPXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPA60R385CPXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
IRF9630STRLPBF
Diodes Incorporated
DMTH4004SCTB-13
onsemi
FDD8880
Infineon Technologies
ISC015N04NM5ATMA1
onsemi
NTMFS5C645NLT3G
STMicroelectronics
STL190N4F7AG
Vishay Siliconix
SIHH26N60E-T1-GE3
Diodes Incorporated
DMP1045U-7
Diodes Incorporated
DMN10H220LVT-7
Diotec Semiconductor