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IPA65R1K0CEXKSA1

Infineon Technologies
IPA65R1K0CEXKSA1 Preview
Infineon Technologies
MOSFET N-CH 650V 7.2A TO220
$1.45
Available to order
Reference Price (USD)
1+
$1.15000
10+
$1.03100
100+
$0.82690
500+
$0.65346
1,000+
$0.52734
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack

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