IPAN60R280PFD7SXKSA1
Infineon Technologies
Infineon Technologies
CONSUMER PG-TO220-3
$2.11
Available to order
Reference Price (USD)
1+
$2.11000
500+
$2.0889
1000+
$2.0678
1500+
$2.0467
2000+
$2.0256
2500+
$2.0045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPAN60R280PFD7SXKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPAN60R280PFD7SXKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPP126N10N3GXKSA1
onsemi
NDD05N50Z-1G
Vishay Siliconix
IRF720STRRPBF
Microchip Technology
APT8020JLL
IXYS
IXTN90N25L2
Nexperia USA Inc.
PMN55ENEH
Vishay Siliconix
SUM70060E-GE3
Infineon Technologies
IPAN65R650CEXKSA1
Rohm Semiconductor
RUM003N02T2L
Infineon Technologies