RUM003N02T2L
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 20V 300MA VMT3
$0.41
Available to order
Reference Price (USD)
8,000+
$0.09520
16,000+
$0.08680
24,000+
$0.08120
56,000+
$0.07840
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RUM003N02T2L by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RUM003N02T2L inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VMT3
- Package / Case: SOT-723
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