IPB80N04S306ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
$1.56
Available to order
Reference Price (USD)
1,000+
$0.70967
Exquisite packaging
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Discover IPB80N04S306ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 52µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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