SIHG20N50E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 19A TO247AC
$2.15
Available to order
Reference Price (USD)
1+
$3.63000
10+
$3.24500
100+
$2.66090
500+
$2.15468
1,000+
$1.81720
2,500+
$1.72634
5,000+
$1.66144
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIHG20N50E-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
IRFR220TRPBF
Rectron USA
RM15N650TI
Rohm Semiconductor
RXH070N03TB1
STMicroelectronics
STP140N8F7
Microchip Technology
TN0106N3-G-P003
onsemi
NDD60N360U1-1G
onsemi
FCMT360N65S3
Diodes Incorporated
DMN63D1L-13
Infineon Technologies
IPU60R2K0C6BKMA1
Sanyo