IPB80P03P4L04ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 80A TO263-3
$2.08
Available to order
Reference Price (USD)
1,000+
$1.02383
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB80P03P4L04ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB80P03P4L04ATMA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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