NVMYS2D1N04CLTWG
onsemi
onsemi
MOSFET N-CH 40V 29A/132A LFPAK4
$1.21
Available to order
Reference Price (USD)
1+
$1.20701
500+
$1.1949399
1000+
$1.1828698
1500+
$1.1707997
2000+
$1.1587296
2500+
$1.1466595
Exquisite packaging
Discount
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Experience the power of NVMYS2D1N04CLTWG, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NVMYS2D1N04CLTWG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 132A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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