IPBE65R230CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11A TO263-7
$6.14
Available to order
Reference Price (USD)
1+
$6.14000
500+
$6.0786
1000+
$6.0172
1500+
$5.9558
2000+
$5.8944
2500+
$5.833
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPBE65R230CFD7AATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPBE65R230CFD7AATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3-10
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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