IXFX64N50P
IXYS
IXYS
MOSFET N-CH 500V 64A PLUS247-3
$18.10
Available to order
Reference Price (USD)
1+
$12.39000
30+
$10.41567
120+
$9.57100
510+
$8.16351
1,020+
$7.88200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXFX64N50P by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXFX64N50P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
onsemi
NTD3808N-1G
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Diodes Incorporated
DMG3406L-13
onsemi
FQT7N10TF
IXYS
IXTH60N20L2
Wolfspeed, Inc.
C3M0160120J
Nexperia USA Inc.
PSMN3R4-30BL,118
Infineon Technologies
BSC028N06NSSCATMA1
onsemi
FDS8449
Alpha & Omega Semiconductor Inc.