IPD380P06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 35A TO252-3
$2.68
Available to order
Reference Price (USD)
1+
$2.68000
500+
$2.6532
1000+
$2.6264
1500+
$2.5996
2000+
$2.5728
2500+
$2.546
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPD380P06NMATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPD380P06NMATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STP12N120K5
Vishay Siliconix
SIHG32N50D-GE3
Alpha & Omega Semiconductor Inc.
AON7422G
Vishay Siliconix
SIRC18DP-T1-GE3
onsemi
NVMFS5C682NLWFAFT3G
onsemi
STB75N06HDT4
Vishay Siliconix
IRL520PBF-BE3
IXYS
IXTN240N075L2
NXP Semiconductors
BUK6C3R3-75C,118
Alpha & Omega Semiconductor Inc.