IPD50N04S4L08ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 50A TO252-3
$1.10
Available to order
Reference Price (USD)
2,500+
$0.33272
5,000+
$0.30977
12,500+
$0.29830
25,000+
$0.29204
Exquisite packaging
Discount
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Enhance your circuit performance with IPD50N04S4L08ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPD50N04S4L08ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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