UJ4SC075009K4S
UnitedSiC
UnitedSiC
750V/9MOHM, SIC, STACKED CASCODE
$40.42
Available to order
Reference Price (USD)
1+
$40.42000
500+
$40.0158
1000+
$39.6116
1500+
$39.2074
2000+
$38.8032
2500+
$38.399
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover UJ4SC075009K4S, a versatile Transistors - FETs, MOSFETs - Single solution from UnitedSiC, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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