IPD65R1K4CFDATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 2.8A TO252-3
$0.75
Available to order
Reference Price (USD)
2,500+
$0.45461
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPD65R1K4CFDATMA2, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD65R1K4CFDATMA2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 28.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTB35N15T4G
Vishay Siliconix
SI7450DP-T1-E3
Vishay Siliconix
SQD40131EL_GE3
Diodes Incorporated
DMP21D0UFD-7
Nexperia USA Inc.
PSMN5R2-60YLX
Fairchild Semiconductor
FQB9N08TM
Alpha & Omega Semiconductor Inc.
AOTF12T60PL
Infineon Technologies
IRF2805STRLPBF
Alpha & Omega Semiconductor Inc.
AOL1240
Infineon Technologies