IPD70N12S3L12ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL_100+
$1.35
Available to order
Reference Price (USD)
2,500+
$0.95604
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPD70N12S3L12ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPD70N12S3L12ATMA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Nexperia USA Inc.
BUK9Y29-40E,115
Infineon Technologies
IRF8301MTRPBF
Renesas Electronics America Inc
NP80N04MLG-S18-AY
Nexperia USA Inc.
BUK9Y3R5-40E,115
IXYS
IXFH50N20
Infineon Technologies
IRLML6302TRPBF
STMicroelectronics
STP80NF55-08AG
Infineon Technologies
IPP60R070CFD7XKSA1
Infineon Technologies
IPD60R210CFD7ATMA1
Vishay Siliconix