IPD70R1K4CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 5.4A TO252-3
$0.94
Available to order
Reference Price (USD)
2,500+
$0.29346
5,000+
$0.27537
12,500+
$0.26633
25,000+
$0.26140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPD70R1K4CEAUMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD70R1K4CEAUMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SQJA81EP-T1_GE3
onsemi
NVD5C486NLT4G
Toshiba Semiconductor and Storage
TK11A55D(STA4,Q,M)
NXP USA Inc.
PMZB290UNE,315
Wolfspeed, Inc.
C3M0060065J
Rohm Semiconductor
RQ7L050ATTCR
Microchip Technology
VN0104N3-G-P013
NXP Semiconductors
BUK7506-55A,127
Infineon Technologies
IAUC80N04S6N036ATMA1
IXYS