IPD80R1K4P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 4A TO252
$1.43
Available to order
Reference Price (USD)
2,500+
$0.49167
5,000+
$0.46978
12,500+
$0.45415
25,000+
$0.45188
Exquisite packaging
Discount
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Infineon Technologies presents IPD80R1K4P7ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPD80R1K4P7ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
- FET Feature: Super Junction
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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