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IPD85P04P407ATMA2

Infineon Technologies
IPD85P04P407ATMA2 Preview
Infineon Technologies
MOSFET P-CH 40V 85A TO252-3
$2.21
Available to order
Reference Price (USD)
1+
$2.21000
500+
$2.1879
1000+
$2.1658
1500+
$2.1437
2000+
$2.1216
2500+
$2.0995
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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