IPD90P03P404ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 90A TO252-3
$1.69
Available to order
Reference Price (USD)
2,500+
$0.82403
5,000+
$0.79351
12,500+
$0.77686
Exquisite packaging
Discount
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Optimize your electronic systems with IPD90P03P404ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPD90P03P404ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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