IPG20N04S4L07AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.92
Available to order
Reference Price (USD)
5,000+
$0.86701
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Infineon Technologies s IPG20N04S4L07AATMA1, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how IPG20N04S4L07AATMA1 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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