IPG20N06S2L35ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 20A 8TDSON
$1.50
Available to order
Reference Price (USD)
5,000+
$0.52917
10,000+
$0.50927
Exquisite packaging
Discount
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The IPG20N06S2L35ATMA1 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, IPG20N06S2L35ATMA1 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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