PJQ4602_R1_00001

Panjit International Inc.

Manufacturer

Panjit International Inc.

Description:

30V COMPLEMENTARY ENHANCEMENT MO

Datasheet:

PJQ4602_R1_00001 Datasheet

$0.79

Available to order

Reference Price (USD)

$0.79000

500+

$0.7821

1000+

$0.7742

1500+

$0.7663

2000+

$0.7584

2500+

$0.7505

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

The PJQ4602_R1_00001 by Panjit International Inc. is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate PJQ4602_R1_00001 into your systems contact us for more details and pricing.

Specifications

Product Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Power - Max: 2W (Ta), 17.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: DFN3030B-8