IPG20N06S4L26ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A TDSON-8
$1.27
Available to order
Reference Price (USD)
5,000+
$0.40481
10,000+
$0.38959
25,000+
$0.38738
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPG20N06S4L26ATMA1 from Infineon Technologies is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, IPG20N06S4L26ATMA1 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Infineon Technologies s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
- Power - Max: 33W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
Related Products
Alpha & Omega Semiconductor Inc.
AOD607A
onsemi
6LP04CH-TL-E
Vishay Siliconix
SI6913DQ-T1-E3
Infineon Technologies
IRF7530TRPBF
Harris Corporation
IRFR1109A
Infineon Technologies
IPG20N06S2L50ATMA1
Nexperia USA Inc.
PMGD290UCEAX
Infineon Technologies
IPG16N10S461ATMA1
onsemi
FDMD8680
Sanyo