IPG20N06S2L50ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 20A 8TDSON
$0.63
Available to order
Reference Price (USD)
5,000+
$0.50532
Exquisite packaging
Discount
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Discover high-performance IPG20N06S2L50ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s IPG20N06S2L50ATMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 19µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
- Power - Max: 51W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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