IPG20N10S4L35AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 20A 8TDSON
$0.76
Available to order
Reference Price (USD)
5,000+
$0.51234
Exquisite packaging
Discount
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Upgrade your electronic designs with Infineon Technologies s IPG20N10S4L35AATMA1, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how IPG20N10S4L35AATMA1 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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