IPI041N12N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 120V 120A TO262-3
$4.57
Available to order
Reference Price (USD)
500+
$3.43342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPI041N12N3GAKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPI041N12N3GAKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
EPC
EPC2037
Vishay Siliconix
SQS460EN-T1_BE3
NXP USA Inc.
BUK9245-55A/C1118
Panjit International Inc.
PJF3NA80_T0_00001
EPC
EPC2035
Sanken
2SK3710
Infineon Technologies
BSF024N03LT3GXUMA1
Toshiba Semiconductor and Storage
TPH5900CNH,L1Q
Vishay Siliconix
SI4155DY-T1-GE3
Renesas Electronics America Inc