IPI65R190CFDXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 17.5A TO262-3
$2.77
Available to order
Reference Price (USD)
500+
$2.02668
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPI65R190CFDXKSA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPI65R190CFDXKSA2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
STMicroelectronics
STU7N65M2
onsemi
NVD3055-150T4G-VF01
STMicroelectronics
STW10NK60Z
Nexperia USA Inc.
PMV42ENER
Infineon Technologies
IPL65R210CFDAUMA1
EPC
EPC2001C
Fairchild Semiconductor
FCA20N60
onsemi
NTHL050N65S3HF
onsemi
NTMFS4923NET3G
Alpha & Omega Semiconductor Inc.