IPL60R180P6AUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 22.4A 4VSON
$2.87
Available to order
Reference Price (USD)
3,000+
$1.66416
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPL60R180P6AUMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPL60R180P6AUMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
Related Products
Infineon Technologies
IPD50N10S3L16ATMA1
Alpha & Omega Semiconductor Inc.
AOB2502L
Rohm Semiconductor
R6020FNX
onsemi
NVD5C688NLT4G
Rectron USA
RMA4N60092
Vishay Siliconix
SQS484EN-T1_GE3
Vishay Siliconix
SI1427EDH-T1-BE3
onsemi
SFT1450-TL-H
Fairchild Semiconductor
FDD2612
Diodes Incorporated