IPL60R2K1C6SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 2.3A THIN-PAK
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPL60R2K1C6SATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPL60R2K1C6SATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 21.6W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-2
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPI50N10S3L16AKSA1
Infineon Technologies
IMBG120R220M1HXTMA1
STMicroelectronics
STL11N65M5
Diodes Incorporated
DMT8008LK3-13
STMicroelectronics
STFU23N80K5
IXYS
IXFR44N80P
onsemi
FDMS7660
Infineon Technologies
IRF3007PBF
NXP USA Inc.
PMPB12UN,115
Texas Instruments