IPL65R1K0C6SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 4.2A THIN-PAK
$0.98
Available to order
Reference Price (USD)
5,000+
$0.57437
Exquisite packaging
Discount
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Boost your electronic applications with IPL65R1K0C6SATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPL65R1K0C6SATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34.7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-2
- Package / Case: 8-PowerTDFN
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