MTB50P03HDLT4G
onsemi
onsemi
MOSFET P-CH 30V 50A D2PAK
$4.70
Available to order
Reference Price (USD)
800+
$2.14500
1,600+
$2.00200
2,400+
$1.90190
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose MTB50P03HDLT4G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with MTB50P03HDLT4G inquire now for more details!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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