IPP085N06LGAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 80A TO-220
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP085N06LGAKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP085N06LGAKSA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A. 10V
- Vgs(th) (Max) @ Id: 2V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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