IPP120N06S4H1AKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 120A TO220-3
$1.91
Available to order
Reference Price (USD)
500+
$2.43114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPP120N06S4H1AKSA2 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPP120N06S4H1AKSA2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Alpha & Omega Semiconductor Inc.
AOI600A70
Infineon Technologies
IPP129N10NF2SAKMA1
Infineon Technologies
BSC117N08NS5ATMA1
SemiQ
GP2T080A120U
STMicroelectronics
STP60N043DM9
Infineon Technologies
IRF4104SPBF
Alpha & Omega Semiconductor Inc.
AOB66616L
Vishay Siliconix
SIR4608LDP-T1-GE3
onsemi
NVTFWS004N04CTAG
Panjit International Inc.