IPP330P10NMAKSA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO220-3
$6.16
Available to order
Reference Price (USD)
1+
$6.16000
500+
$6.0984
1000+
$6.0368
1500+
$5.9752
2000+
$5.9136
2500+
$5.852
Exquisite packaging
Discount
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Discover high-performance IPP330P10NMAKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPP330P10NMAKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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