IPP80P03P4L04AKSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 80A TO220-3
$3.30
Available to order
Reference Price (USD)
1+
$2.39000
50+
$1.92420
100+
$1.73180
500+
$1.34692
1,000+
$1.11602
Exquisite packaging
Discount
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IPP80P03P4L04AKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPP80P03P4L04AKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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