IRFHM8326TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 25A PQFN
$0.72
Available to order
Reference Price (USD)
4,000+
$0.27004
8,000+
$0.25436
12,000+
$0.23869
28,000+
$0.22772
Exquisite packaging
Discount
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Infineon Technologies presents IRFHM8326TRPBF, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRFHM8326TRPBF delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: 8-PowerTDFN
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