IPT60R022S7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23A 8HSOF
$18.86
Available to order
Reference Price (USD)
1+
$18.86000
500+
$18.6714
1000+
$18.4828
1500+
$18.2942
2000+
$18.1056
2500+
$17.917
Exquisite packaging
Discount
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Enhance your circuit performance with IPT60R022S7XTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPT60R022S7XTMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
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