IPW60R037P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 76A TO247-3
$13.92
Available to order
Reference Price (USD)
1+
$12.68000
10+
$11.49200
240+
$9.59488
720+
$8.17181
1,200+
$7.22310
Exquisite packaging
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Upgrade your electronic designs with IPW60R037P7XKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPW60R037P7XKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.48mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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