IPW60R125C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 30A TO247-3
$7.78
Available to order
Reference Price (USD)
1+
$6.27000
10+
$5.64400
240+
$4.69342
720+
$3.86992
1,200+
$3.32091
Exquisite packaging
Discount
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Experience the power of IPW60R125C6FKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPW60R125C6FKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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