IPW65R150CFDFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 22.4A TO247-3
$5.98
Available to order
Reference Price (USD)
1+
$4.93000
10+
$4.42800
240+
$3.68242
720+
$3.03629
1,200+
$2.60555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPW65R150CFDFKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPW65R150CFDFKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 195.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
SSM3J377R,LF
Infineon Technologies
SPU01N60C3
Rohm Semiconductor
RTR020N05HZGTL
onsemi
FQPF8N80C
Fairchild Semiconductor
FDZ204P
Infineon Technologies
IPD75N04S406ATMA1
Infineon Technologies
IPAN60R360PFD7SXKSA1
Vishay Siliconix
SI4413ADY-T1-E3
Diodes Incorporated
DMN2991UFO-7B
Infineon Technologies