IPW90R340C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 15A TO247-3
$5.40
Available to order
Reference Price (USD)
1+
$5.39600
500+
$5.34204
1000+
$5.28808
1500+
$5.23412
2000+
$5.18016
2500+
$5.1262
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPW90R340C3XKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPW90R340C3XKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
Related Products
onsemi
NVTFWS9D6P04M8LTAG
Infineon Technologies
IRFB4229PBF
onsemi
NTD30N02T4G
Infineon Technologies
IPA50R299CPXKSA1
onsemi
FDB2614
Rohm Semiconductor
RSF015N06FRATL
Infineon Technologies
IPB025N10N3GE8187ATMA1
Nexperia USA Inc.
PSMN041-80YLX
Texas Instruments
CSD25211W1015
Infineon Technologies