IPZ60R099P6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 37.9A TO247-4
$6.22
Available to order
Reference Price (USD)
240+
$5.45079
Exquisite packaging
Discount
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Boost your electronic applications with IPZ60R099P6FKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPZ60R099P6FKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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