IPZA60R080P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 37A TO247-4
$8.71
Available to order
Reference Price (USD)
1+
$7.02000
10+
$6.31900
240+
$5.19554
720+
$4.35304
1,200+
$3.79135
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPZA60R080P7XKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPZA60R080P7XKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 129W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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