IRF5801TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 600MA MICRO6
$0.69
Available to order
Reference Price (USD)
3,000+
$0.20371
6,000+
$0.19189
15,000+
$0.18006
30,000+
$0.17179
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRF5801TRPBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRF5801TRPBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6™(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Diodes Incorporated
DMN3730UFB-7
Vishay Siliconix
SIHD6N65ET5-GE3
Infineon Technologies
IPP05CN10NGXKSA1
onsemi
NDD03N50Z-1G
Vishay Siliconix
SIA421DJ-T1-GE3
IXYS
IXTP62N15P
Diodes Incorporated
DMP3056LSSQ-13
Infineon Technologies
IRFR825TRPBF
Panjit International Inc.
PJQ4442P-AU_R2_000A1
Infineon Technologies