IRF60SC241ARMA1
Infineon Technologies

Infineon Technologies
MOSFET N-CH 60V 360A TO263-7
$4.59
Available to order
Reference Price (USD)
1+
$4.59000
500+
$4.5441
1000+
$4.4982
1500+
$4.4523
2000+
$4.4064
2500+
$4.3605
Exquisite packaging
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Enhance your circuit performance with IRF60SC241ARMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IRF60SC241ARMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)