IRF6613TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 23A DIRECTFET
$2.86
Available to order
Reference Price (USD)
4,800+
$0.91234
9,600+
$0.89320
Exquisite packaging
Discount
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IRF6613TRPBF by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRF6613TRPBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MT
- Package / Case: DirectFET™ Isometric MT
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