IRF9Z24NSTRLPBF
Infineon Technologies
Infineon Technologies
MOSFET P-CH 55V 12A D2PAK
$1.24
Available to order
Reference Price (USD)
1+
$1.24000
500+
$1.2276
1000+
$1.2152
1500+
$1.2028
2000+
$1.1904
2500+
$1.178
Exquisite packaging
Discount
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Boost your electronic applications with IRF9Z24NSTRLPBF, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRF9Z24NSTRLPBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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